september 2010 fdp7n60nz / fdpf7n60n z n-channel mosfet ?2010 fairchild semiconductor corporation fdp7n60nz / FDPF7N60NZ rev. a www.fairchildsemi.com 1 unifet-ii tm fdp7n60nz / FDPF7N60NZ n-channel mosfet ? 600v, 6.5a, 1.25 ? features ?r ds(on) = 1.05 ? ( typ.)@ v gs = 10v, i d = 3.25a ? low gate charge ( typ. 13nc) ? low c rss ( typ. 7pf) ? fast switching ? 100% avalanche tested ? improved dv/dt capability ? esd improved capability ? rohs compliant description these n-channel enhancement mode power field effect transis- tors are produced using fairchild?s proprietary, planar stripe, doms technology. this advance technology has been especially tailored to mini- mize on-state resistance, prov ide superior switching perfor- mance, and withstand high energy pulse in the avalanche and commutationmode. these devices are well suited for high effi- cient switched mode power supplies and active power factor cor- rection. to-220 fdp series g d s to-220f fdpf series (potted) g s d mosfet maximum ratings t c = 25 o c unless otherwise noted* thermal characteristics symbol parameter fdp7n60nz FDPF7N60NZ units v dss drain to source voltage 600 v v gss gate to source voltage 30 v i d drain current -continuous (t c = 25 o c) 6.5 6.5* a -continuous (t c = 100 o c) 3.9 3.9* i dm drain current - pulsed (note 1) 26 26* a e as single pulsed avalanche energy (note 2) 275 mj i ar avalanche current (note 1) 6.5 a e ar repetitive avalanche energy (note 1) 14.7 mj dv/dt peak diode recovery dv/dt (note 3) 10 v/ns p d power dissipation (t c = 25 o c) 147 33 w - derate above 25 o c 1.2 0.26 w/ o c t j , t stg operating and storage temperature range -55 to +150 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter fdp7n60nz FDPF7N60NZ units r ? jc thermal resistance, junction to case 0.85 3.8 o c/w r ? cs thermal resistance, case to sink typ. 0.5 - r ? ja thermal resistance, junction to ambient 62.5 62.5 *drain current limited by maximum junction temperature
fdp7n60nz / fdpf7n60n z n-channel mosfet fdp7n60nz / FDPF7N60NZ rev. a www.fairchildsemi.com 2 package marking and ordering information t c = 25 o c unless otherwise noted electrical characteristics off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics device marking device package reel size tape width quantity fdp7n60nz fdp7n60nz to-220 - - 50 FDPF7N60NZ FDPF7N60NZ to-220f - - 50 symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown voltage i d = 250 ? a, v gs = 0v, t j = 25 o c 600 - - v ? bv dss ? t j breakdown voltage temperature coefficient i d = 250 ? a, referenced to 25 o c-0.6-v/ o c i dss zero gate voltage drain current v ds = 600v, v gs = 0v - - 1 ? a v ds = 480v, t c = 125 o c--10 i gss gate to body leakage current v gs = 25v, v ds = 0v - - ? 10 ? a v gs(th) gate threshold voltage v gs = v ds , i d = 250 ? a3-5v r ds(on) static drain to source on resistance v gs = 10v, i d = 3.25a - ? 1.05 1.25 ? g fs forward transconductance v ds = 20v, i d = 3.25a (note 4) -7.3-s c iss input capacitance v ds = 25v, v gs = 0v f = 1mhz - 550 730 pf c oss output capacitance - 70 90 pf c rss reverse transfer capacitance - 7 10 pf q g(tot) total gate charge at 10v v ds = 480v, i d = 6.5a v gs = 10v (note 4, 5) -1317nc q gs gate to source gate charge - 3 - nc q gd gate to drain ?miller? charge - 5.6 - nc t d(on) turn-on delay time v dd = 300v, i d = 6.5a r g = 25 ? (note 4, 5) -17.545ns t r turn-on rise time - 30 70 ns t d(off) turn-off delay time - 40 90 ns t f turn-off fall time - 25 60 ns i s maximum continuous drain to source diode forward current - - 6.5 a i sm maximum pulsed drain to source diode forward current - - 26 a v sd drain to source diode forward voltage v gs = 0v, i sd = 6.5a - - 1.4 v t rr reverse recovery time v gs = 0v, i sd = 6.5a di f /dt = 100a/ ? s (note 4) - 250 - ns q rr reverse recovery charge - 1.4 - ? c notes: 1: repetitive rating: pulse width limi ted by maximum junction temperature 2: l =13mh, i as = 6.5a, v dd = 50v, r g = 25 ? , starting t j = 25c 3: i sd ?? 6.5a, di/dt ?? 200a/ ? s, v dd ?? bv dss , starting t j = 25c 4: pulse test: pulse width ?? 300 ? s, duty cycle ?? 2% 5: essentially independent of operating temperature typical characteristics
fdp7n60nz / fdpf7n60n z n-channel mosfet fdp7n60nz / FDPF7N60NZ rev. a www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 45678 0.1 1 10 100 -55 o c 150 o c * notes : 1. v ds = 20v 2. 250 ? s pulse test 25 o c i d , drain current[a] v gs , gate-source voltage[v] 0.1 1 10 20 0.1 1 10 20 *notes: 1. 250 ? s pulse test 2. t c = 25 o c v gs = 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v i d , drain current[a] v ds , drain-source voltage[v] 0.40.60.81.01.21.4 1 10 100 notes: 1. v gs = 0v 2. 250 ? s pulse test 150 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0 2 4 6 8 10 12 14 0.8 1.0 1.2 1.4 1.6 1.8 2.0 * note : t j = 25 o c v gs = 20v v gs = 10v r ds ( on ) [ ? ] , drain-source on-resistance i d , drain current [a] 0 2 4 6 8 10 12 14 0 2 4 6 8 10 * note : i d = 6.5a v ds = 120v v ds = 300v v ds = 480v v gs , gate-source voltage [v] q g , total gate charge [nc] 0.1 1 10 1 10 100 1000 5000 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd * note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 30
fdp7n60nz / fdpf7n60n z n-channel mosfet fdp7n60nz / FDPF7N60NZ rev. a www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs temperature figure 9. maximum safe operating area figure 10. maximum drain current -FDPF7N60NZ -fdp7n60nz -100 -50 0 50 100 150 0.8 0.9 1.0 1.1 1.2 * notes : 1. v gs = 0v 2. i d = 250ua bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c] -100 -50 0 50 100 150 0 0.5 1.0 1.5 2.0 2.5 3.0 * notes : 1. v gs = 10v 2. i d = 3.25a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c] 1 10 100 1000 0.01 0.1 1 10 100 10 ? s 100 ? s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse dc 1 10 100 1000 0.01 0.1 1 10 100 30 ? s 100 ? s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse dc 25 50 75 100 125 150 0 2 4 6 8 i d , drain current [a] t c , case temperature [ o c ] figure 11. maximum drain current vs case temperature
fdp7n60nz / fdpf7n60n z n-channel mosfet fdp7n60nz / FDPF7N60NZ rev. a www.fairchildsemi.com 5 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 0.01 0.1 1 0.01 0.1 0.2 0.05 0.02 * notes : 1. z ? jc (t) = 3.8 o c/w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z ? jc (t) 0.5 single pulse thermal response [ z ? jc ] rectangular pulse duration [sec] 5 10 -5 10 -4 10 -3 10 -2 10 -1 11010 2 10 3 0.001 0.01 0.1 1 0.01 0.1 0.2 0.05 0.02 * notes : 1. z ? jc (t) = 0.85 o c/w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z ? jc (t) 0.5 single pulse thermal response [ z ? jc ] rectangular pulse duration [sec] 5 t 1 p dm t 2 figure 12. transient thermal response curve -FDPF7N60NZ figure 13. transient thermal response curve -fdp7n60nz t 1 p dm t 2
fdp7n60nz / fdpf7n60n z n-channel mosfet fdp7n60nz / FDPF7N60NZ rev. a www.fairchildsemi.com 6 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
fdp7n60nz / fdpf7n60n z n-channel mosfet fdp7n60nz / FDPF7N60NZ rev. a www.fairchildsemi.com 7 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
fdp7n60nz / fdpf7n60n z n-channel mosfet fdp7n60nz / FDPF7N60NZ rev. a www.fairchildsemi.com 8 dimensions in millimeters mechanical dimensions to-220
fdp7n60nz / fdpf7n60n z n-channel mosfet fdp7n60nz / FDPF7N60NZ rev. a www.fairchildsemi.com 9 package dimensions (continued) * front/back side isolation voltage : 2500v to-220f dimensions in millimeters
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